1、It Can detect bipolar transistors and MOS transistors protection diodes 2、Measuring the gate MOS FET threshold voltage and the gate capacitance 3、Resistance measurement resolution is 0.1 ohms , 50M ohms can be measured 4、It Can measure capacitance of 30pF-100mF , resolution 1pF 5、Automatic identification components pin arrangement Product features: It Can detect bipolar transistors and MOS transistors protection diodes. Measuring the gate MOS FET threshold voltage and the gate capacitance. Resistance measurement resolution is 0.1 ohms , 50M ohms can be measured . It Can measure capacitance of 30pF-100mF , resolution 1pF. Automatic identification components pin arrangement . Specification: One -button operation, automatic shutdown . Only 20nA shutdown current. Automatically detect NPN, PNP bipolar transistors, N -channel and P -channel MOS FET, JFET, diodes, two diodes, thyristors small power unidirectional and bidirectional thyristor. Automatic identification components pin arrangement.Measuring bipolar transistor current amplification factor and base - emitter threshold voltage.Via the base - emitter threshold voltage and high current amplification factor to identify Darlington transistors. It Can simultaneously measure two resistors and resistor symbol is displayed. Displayed on the right with a decimal value of 4 . Resistance symbol on both sides shows the pin number. So you can measure the potentiometer. If the potentiometer wiper is not transferred to an extreme position , we can distinguish the middle and both ends of the pin. Resistance measurement resolution is 0.1 ohms , 50M ohms can be measured .It Can measure capacitance of 30pF-100mF , resolution 1pF. 2uF more capacitors can simultaneously measure the equivalent series resistance ESR values. The two can be displayed with a decimal value , resolution 0.01 ohms. Can be in the correct order and the diode symbol display two diodes , and gives the diode forward voltage. LED is detected as a diode forward voltage higher . Combo of the LED is identified as two diodes. Reverse breakdown voltage is less than 4.5V Zener diode can be identified. Can measure a single diode reverse capacitance. If the bipolar transistor connected to the base and collector or emitter of a pin , it can measure the collector or emitter junction reverse capacitance.Can be obtained with a single measurement rectifier bridge connection. Note: Before the measurement of capacitance, must to discharge the capacitor, otherwise may damage the instrument. Package included: 1 x Transistor Tester Diode Capacitance ESR resistance Meter PNP NPN